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... s-Point CMOx" align="left" /><p>TORONTO \x96 Tezzaron Semiconductor will be ...
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<?xml version="1.0" encoding="UTF-8"?><rss version="2.0" xmlns:content="http://purl.org/rss/1.0/modules/content/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:sy="http://purl.org/rss/1.0/modules/syndication/" > <channel> <title>RSS Semiconductor devices</title> <link>http://semiconductordevice.net/</link> <description>Semiconductor devices</description> <lastBuildDate>Tue, 16 Mar 2021 05:47:41 -0400</lastBuildDate> <language>en</language> <sy:updatePeriod>daily</sy:updatePeriod> <sy:updateFrequency>1</sy:updateFrequency> <item> <title>On Semiconductor Address</title> <description>PHOENIX, Ariz. – Oct. 8, 2015 – ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, is collaborating with GainSpan and GEO Semiconductor to rapidly respond to the ever-growing potential of the Internet of ...</description> <content:encoded><![CDATA[<img src="/img/growing_momentum_in_semiconductor_manufacturing_in.jpg" alt="Fig 3" align="left" /><p>PHOENIX, Ariz. – Oct. 8, 2015 – ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, is collaborating with GainSpan and GEO Semiconductor to rapidly respond to the ever-growing potential of the Internet of Things (IoT). Through this partnership, customers will benefit from the leadership each company has shown in its respective field: ON Semiconductor’s advanced and expansive portfolio of image sensors, GEO’s highly cost-effective and power efficient image signal processing technology and GainSpan’s expertise in low power Wi-Fi solutions. A highly optimized IoT video reference design is the trio’s first collaboration. The GS-AR0330-Based Full HD Video, available via GainSpan and its distributors, targets smart 1080p video streaming over Wi-Fi. Through wireless connectivity, it can interface seamlessly with smartphones that use either iOS or Android operating systems. The solution comprises all of the hardware and software needed for engineers to quickly and simply add video streaming capabilities into their IoT-based designs, thereby facilitating the development process and accelerating time to market. The video reference design is accompanied by a complete software suite, plus a series of sophisticated mobile application programming interfaces (APIs). Central to this solution is ON Semiconductor’s AR0330 1/3-Inch optical format CMOS image sensor, which delivers superior imaging quality in low light conditions. Using its 2304 x 1296 active-pixel array, this device has the capacity to capture 3 megapixel (MP) still images. It also incorporates advanced on-chip camera features, such as column/row subsampling, windowing, mirroring and snapshot modes. The video reference design’s processing resource offers H.264 encoding/compression thanks to its high performance, ultra-low power multi-mode SoC. This can deal with 1080p high definition resolution image content at 60 frames per second (fps), as well as supporting auto white balance, auto exposure and auto focus functions. By detecting movement, the on-board passive infra-red sensor can be utilized for rapid wake up of the system from standby, so that video streaming can begin. “This cooperative agreement with GainSpan and GEO Semiconductor, and the products that will be derived from it, will have considerable positive impact on the IoT sector. The attributes that each company brings to the partnership complements each other perfectly, ” states Radhika Arora, IoT Product Line Manager, Automotive Imaging and Scanning Division at ON Semiconductor. “This allows us to fully capitalize upon the possibilities for video-enabled IoT implementations, in home automation, security, smart lighting, building access and infant monitoring systems.” “GEO Semiconductor is pleased to partner with GainSpan and ON Semiconductor to enable system solutions for emerging markets where low power and high quality video are key requirements. GEO anticipates rapid adoption of these jointly developed solutions for the IoT marketplace, ” says Kent Goodin, Vice President & General Manager of Consumer Products at GEO Semiconductor Inc...</p>]]></content:encoded> <category><![CDATA[Fairchild Semiconductor]]></category> <link>http://semiconductordevice.net/FairchildSemiconductor/on-semiconductor-address</link> <guid isPermaLink="true">http://semiconductordevice.net/FairchildSemiconductor/on-semiconductor-address</guid> <pubDate>Tue, 16 Mar 2021 13:47:00 +0000</pubDate> </item> <item> <title>Introduction to Semiconductor Physics</title> <description>I must confess that until recently, I wasn’t well-versed in semiconductor physics or technology. While it’s rather easy to understand what a transistor does and some of the terminology thrown around, going deeper was tough. A ...</description> <content:encoded><![CDATA[<img src="/img/mcnamara_dream_laboratory.jpg" alt="With an introduction to" align="left" /><p>I must confess that until recently, I wasn’t well-versed in semiconductor physics or technology. While it’s rather easy to understand what a transistor does and some of the terminology thrown around, going deeper was tough. A great deal of the information on the internet is simply too cryptic to understand, even for those that want to learn. Seeing as how this site is all about the results of semiconductor physics and technology, this was the best place to share the knowledge that I've acquired. The simplest place to start is the materials. Silicon is incredibly important as a material in the industry because it’s a semiconductor. Of course, the name is self-explanatory, but there’s more to it. The key here is the band structure. Band structure refers to the “bands” of energy levels that form due to the sheer number of orbital states that can be occupied in molecules. Those that understand how electron orbitals work will point out that each energy level is discrete, but due to the sheer number of orbital configurations, a seemingly continuous distribution of energy can be seen. However, relatively large gaps still exist; known as a band gap, these are an energy state that an electron cannot occupy. The question now is why this matters. The reason why it does matter is because of the Fermi level, or EF in the photo above. The Fermi level refers to the total chemical potential energy for a system of electrons at absolute zero. If the band lies above the Fermi level, electrons in the band can be delocalized from the atom, which means that it can carry current. This band is called a conduction band. If the band is below the Fermi level, this means that the electron is bound to an atom. This band would be a valence band. Intrinsically, a semiconductor should have its Fermi level at the midpoint of the band gap. This is true of both insulators and intrinsic semiconductors, but a semiconductor’s band gap is extremely small. In fact, it’s small enough that electrons can jump the band gap as seen in the photo above because of thermal energy that will always exist in real world situations. While this property alone isn't particularly useful for digital logic, doping a semiconductor can have significant effects on the band structure. This means that the distribution of electrons in the valence band or conduction band will change. This is where I have to introduce even more terminology. Depending on how the distribution is changed, a semiconductor is dubbed either a p-type or n-type semiconductor. If the band structure is such that free electrons are more easily generated, it becomes an n-type semiconductor. If the structure is such that electron “holes” are generated, it becomes a p-type semiconductor. In this case, electron holes refers to a place where an electron could exist, but doesn’t. Such a hole still conducts current. Look carefully at the p-type diagram once again. Because the valence band is so close to the Fermi level, electrons tend to stay in the valence band at lower orbitals. This is means that there are "holes" where an electron could be, which makes it a charge carrier. It's also worth noting that the diagram above isn't totally accurate, as doping normally introduces more bands instead of shifting their positions, but the concept is the same. What really makes things interesting is when a p-type and n-type semiconductor are placed next to each other. Because p-type semiconductors tend to have electron holes and n-type semiconductors tend to have an excess of electrons, there will be a diffusion of holes and electrons to try and equalize charge at the junction. Because of this diffusion process, the area around the junction becomes charged positively at the n-doped region and negatively at the p-doped region. This happens because the n-doped region is losing electrons, making the area positive while the p-doped region is losing holes, therefore becoming negative. The result is that an electric field is generated which opposes this diffusion and eventually reaches equilibrium. The area where this process occurs is called the depletion layer, as these ionized areas are stripped of charge carriers and therefore unable to carry current with the band structure that already exists. This p-n junction is incredibly important in solid state electronics. In fact, the system we just described can be used as a diode, which is a device that only allows current to flow in a single direction. If a battery is connected with the positive terminal at the p-type semiconductor and the negative on the n-type semiconductor, the holes in the p-type and the electrons in n-type are all pushed towards the junction, which causes the depletion zone to shrink. This means that the electric field repelling the current decreases, and current is allowed to flow across the junction.</p>]]></content:encoded> <category><![CDATA[Fairchild Semiconductor]]></category> <link>http://semiconductordevice.net/FairchildSemiconductor/introduction-to-semiconductor-physics</link> <guid isPermaLink="true">http://semiconductordevice.net/FairchildSemiconductor/introduction-to-semiconductor-physics</guid> <pubDate>Mon, 08 Mar 2021 14:46:00 +0000</pubDate> </item> <item> <title>Signs and boards containing useful information</title> <description>Anyone working with electrical or electronic devices will be familiar with small signs and posters that remind them of a hazard or a sequence of actions.But even in everyday life, we often come across an information stand or ...</description> <content:encoded><![CDATA[<img src="/img/8white-empty-signboard-concrete-parking-580.jpg" alt="Semiconductors ICs and" align="left" /><p>Anyone working with electrical or electronic devices will be familiar with small signs and posters that remind them of a hazard or a sequence of actions.But even in everyday life, we often come across an information stand or Pavement Sign .This is one of the most effective advertising methods. Various information boards are indispensable in shops, shopping centers, hotels, cafes, and restaurants, in general, wherever there are a lot of people.Depending on the situation, Pavement Signs have their own specifics...</p>]]></content:encoded> <category><![CDATA[Semiconductor Devices]]></category> <link>http://semiconductordevice.net/SemiconductorDevices/signs-and-boards-containing-useful-information</link> <guid isPermaLink="true">http://semiconductordevice.net/SemiconductorDevices/signs-and-boards-containing-useful-information</guid> <pubDate>Fri, 05 Mar 2021 10:40:00 +0000</pubDate> </item> <item> <title>Unity Semiconductor</title> <description>TORONTO \x96 Tezzaron Semiconductor will be the first customer to incorporate Rambus oxide-resistive memory (ReRAM) technology in forthcoming devices through an architecture license that provides Tezzaron access to system IP ...</description> <content:encoded><![CDATA[<img src="/img/what_happened_to_next_generation_non.jpg" alt="Rambus-Unity Cross-Point CMOx" align="left" /><p>TORONTO \x96 Tezzaron Semiconductor will be the first customer to incorporate Rambus oxide-resistive memory (ReRAM) technology in forthcoming devices through an architecture license that provides Tezzaron access to system IP, specifications and validation suites to design differentiated chips using ReRAM. ReRAM, sometimes known as RRAM, operates by changing the resistance of special dielectric material called a memresistor, whose resistance varies depending on the applied voltage. The main advantage of ReRAM over other non-volatile memories is its high switching speed. The thinness of the memresistors means it has potential for high storage density, greater read and write speeds, lower power usage, and cheaper cost than flash memory. Bob Patti, Tezzaron\x92s CTO, said the company sees short-term potential for ReRAM in military, aerospace and HPC applications where it can meet the power and performance requirements, and long-term opportunity in more commercial memory applications. Tezzaron is always on the look-out for new memory technologies, he said, and ReRAM fits into the emerging market of storage-class memory. Patti said ReRAM offers very high endurance for military and aerospace customers as well as radiation hardness. \x93It\x92s much more robust than standard flash.\x94 He sees it having the potential to replace DRAM as it could scale better in the long term, perhaps as low as six nanometers. ReRAM fills the gap between what DRAM and flash can provide while being highly reliable and high speed, said Gary Bronner, VP of Rambus Labs. In addition to the aerospace and military applications that Tezzaron is eyeing for ReRAM use, he said Rambus sees an opportunity for Internet of Things devices, in part because of its low power qualities. Rambus has been working on ReRAM since acquiring the technology through its acquisition of Unity Semiconductor in early 2012. Unity was working on a metal oxide-based cross-point two-terminal non-volatile memory cell under the name CMOx, which Rambus renamed ReRAM. CMOx was intended as a NAND flash replacement, said Bronner, but since acquiring Unity, Rambus has focused on pivoting the technology and sees the immediate interest in ReRAM for embedded applications that require ultra-low power non-volatile memory. While it could be a replacement for NAND flash and DRAM in the long term, 3D NAND is addressing the current scaling issues for that technology, although the future of DRAM is a little less clear. The concept of ReRAM goes back further than the efforts of Rambus. Unity's work on the technology dates back to 2002. In 2011, researchers from the Samsung Advanced Institute of Technology and the department of physics at Sejong University in Seoul, Korea reported on a non-volatile resistive RAM with a read-write endurance of more than one trillion cycles. Elpida Memory announced the development of a ReRAM prototype in early 2013 with plans to commercialize towards volume production of a gigabit-scale ReRAM in 2013. Jim Handy, principal analyst with Objective Analysis places ReRAM in category he calls \x93exotic memory, \x94 which has three key characteristics: it\x92s non-volatile, high speed, and low power. These memories aren\x92t often cheap and tend to be niche. ReRAM could become a cheaper alternative in some niche applications, including those that require SRAM with battery power, something MRAM is doing. Ultimately, it\x92s cost that determines the uptake of these niche memories, and if ReRAM finds more opportunities to expand markets, its cost will come down, \x94 said Handy. \x93Alternative memories are getting into the market by replacing the most expensive existing option, then the second.\x94 Handy said Tezzaron is essentially a pioneer in a market that hasn\x92t developed yet, but that ReRAM is making rapid progress given that it has really hasn\x92t done beta sampling but has been licensed to go into production. Patti couldn\x92t give specific details on future products using ReRAM, but Tezzaron plans to build ReRAM into storage-class 3D memory devices for military, aerospace and commercial applications, as well as implement ReRAM in an assortment of SoCs, FPGAs and processors to take advantage of the split-fab production experience of Tezzaron\x92s fabrication subsidiary, Novati Technologies, which add hundreds of megabytes of storage to a logic device manufactured in a standard commercial fab. The first in Tezzaron\x92s family of Rambus ReRAM devices is currently in the design phase and is expected to go into production in 2016. More broadly, Patti said the company focuses on creating devices with self-repair features for devices that can\x92t be easily accessed for maintenance, such as satellites and other space-bound equipment, such as rovers on Mars that have had partial flash memory failures.</p>]]></content:encoded> <category><![CDATA[Semiconductor Equipment]]></category> <link>http://semiconductordevice.net/SemiconductorEquipment/unity-semiconductor</link> <guid isPermaLink="true">http://semiconductordevice.net/SemiconductorEquipment/unity-semiconductor</guid> <pubDate>Sun, 28 Feb 2021 14:46:00 +0000</pubDate> </item> <item> <title>HANA Semiconductor</title> <description>Hana Micron , (KOSDAQ 067310), is a semiconductor company specializing in assembly and product packaging as well as test and module manufacturing services. Hana Micron was founded in 2001 and its headquarters is located in Asan ...</description> <content:encoded><![CDATA[<img src="/img/ceedi_micro_electronics.jpg" alt="Mitsubishi-Stone IC Co., Ltd" align="left" /><p>Hana Micron , (KOSDAQ 067310), is a semiconductor company specializing in assembly and product packaging as well as test and module manufacturing services. Hana Micron was founded in 2001 and its headquarters is located in Asan City, South Korea. As of 2011, Hana Micron has over 1300 employees and reported over $260 million in sales. Currently, Hana Micron has other offices around the world including offices in the United States, Brazil, and China. Hana Micron's manufacturing factories are located in South Korea and Brazil. In 2007, Hana Silicon was created as a subsidiary of Hana Micron. Hana Silicon provides consumable parts for the semiconductor etching process which is the silicon based cathode ring essential for manufacturing semiconductor products. In 2008, Hana Micron America along with Hana Innosys were formed as a subsidiary of Hana Micron to concentrate on the SI (System Integration) business. Hana Innosys has developed a system integration solution for animal traceability by using RFID technology. In addition to the animal traceability solution, Hana Innosys has implemented a system integration solution for GPS fleet tracking systems.</p>]]></content:encoded> <category><![CDATA[Fairchild Semiconductor]]></category> <link>http://semiconductordevice.net/FairchildSemiconductor/hana-semiconductor</link> <guid isPermaLink="true">http://semiconductordevice.net/FairchildSemiconductor/hana-semiconductor</guid> <pubDate>Sat, 20 Feb 2021 14:38:00 +0000</pubDate> </item> <item> <title>Semiconductor symbol</title> <description>Home &gt; About &gt; Company &gt; News Center &gt; Business News ON Semiconductor Corporation (Nasdaq: ONNN), driving energy efficient innovations, has announced it will change its NASDAQ trading symbol to “ON” – effective ...</description> <content:encoded><![CDATA[<img src="/img/transistors_learnsparkfuncom.jpg" alt="The diode connecting base to" align="left" /><p>Home > About > Company > News Center > Business News ON Semiconductor Corporation (Nasdaq: ONNN), driving energy efficient innovations, has announced it will change its NASDAQ trading symbol to “ON” – effective upon the market’s open on April 6, 2015. The company will continue to operate as ON Semiconductor Corporation. The move to the new symbol, which is more closely tied with the name of the company, is intended to strengthen ON Semiconductor’s brand and is another step towards improving ON Semiconductor’s profile within the investment community. “The new symbol will help foster a stronger, consistent and more recognizable brand for ON Semiconductor, ” said Keith Jackson, president and CEO of ON Semiconductor. “We are excited about the future of the company as we embark on a new phase of growth, improving cash flow and shareholder returns.” Starting on April 6, 2015, all company information, including stock trading, filings, and market data related to the company, will be reported under the new ticker symbol, “ON.” The CUSIP for company’s common stock will remain unchanged. Outstanding stock certificates are not affected by the symbol change and will not need to be exchanged. Follow @onsemi on Twitter : About ON Semiconductor ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. For more information, visit . # # # ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its Web site in this news release, such information on the Web site is not to be incorporated herein.</p>]]></content:encoded> <category><![CDATA[Cypress Semiconductor]]></category> <link>http://semiconductordevice.net/CypressSemiconductor/semiconductor-symbol</link> <guid isPermaLink="true">http://semiconductordevice.net/CypressSemiconductor/semiconductor-symbol</guid> <pubDate>Fri, 12 Feb 2021 14:22:00 +0000</pubDate> </item> <item> <title>Pericom Semiconductor Corp</title> <description>We are the market-leader in high-speed analog switching technology, and we are proud to hold ‘industry firsts’ with dual HDMI and PCI Express signal switching solutions, as well as unique serial signal integrity technology ...</description> <content:encoded><![CDATA[<img src="/img/2_copyright_pericom.jpg" alt="2 Copyright Pericom" align="left" /><p>We are the market-leader in high-speed analog switching technology, and we are proud to hold ‘industry firsts’ with dual HDMI and PCI Express signal switching solutions, as well as unique serial signal integrity technology. Today, Pericom’s technology encompasses all major serial high-speed protocols including PCI Express (1.0 + 2.0), USB 2.0 + SuperSpeed 3.0, HDMI/DVI + DisplayPort, SAS/SATA, XAUI, Fibre Channel, and Gigabit Ethernet. More Latest company events, news, updates, video and more. More Benefits Pericom creates innovative devices essential to the demands of high-speed technology: switching, bridging, signal integrity and timing solutions that move the world of computing forward. Pericom offers to its team members competitive salary, stock options, stock purchase plan, 401(K) and medical/dental benefits. Pericom is an Equal Opportunity Employer. See open positions available now. Apply Now! Email Please include your resume and cover letter as either a MS Word… More A wholly owned Taiwan based subsidiary company acquired by Pericom Semiconductor in Sept 2007. Saronix-eCera, was first established in July 2000, with a reputation for producing high quality, performance driven frequency control products (FCP) widely used in the computing, telecommunication and consumer electronics industries. Pericom Saronix-eCera is the only brand in the market offering a total solution for IC design, crystal blank cut and frequency control components. Its unique vertical… More</p>]]></content:encoded> <category><![CDATA[Semiconductor Equipment]]></category> <link>http://semiconductordevice.net/SemiconductorEquipment/pericom-semiconductor-corp</link> <guid isPermaLink="true">http://semiconductordevice.net/SemiconductorEquipment/pericom-semiconductor-corp</guid> <pubDate>Thu, 04 Feb 2021 14:16:00 +0000</pubDate> </item> <item> <title>San Diego Semiconductor company</title> <description>/PRNewswire/ - Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the company's has been named a finalist in the San Diego Business Journal's 2015 Healthiest ...</description> <content:encoded><![CDATA[<img src="/img/whole_foods_tumbles_wfm.jpg" alt="Whole Foods Tumbles (WFM)" align="left" /><p>/PRNewswire/ - Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the company's has been named a finalist in the San Diego Business Journal's 2015 Healthiest Companies Awards. Winners will be announced at an awards reception this . "When our 'Integrated Wellness' program was launched in 2011, it further enforced Peregrine's health and wellness culture and enabled the employee population to truly rally around wellness activities and events, " says Sarah Canfield, Peregrine Semiconductor's director of human resources. "Not many innovative engineering companies run the Ragnar Relay Series every year or have such diversified wellness initiatives to provide employees with opportunities to make healthy choices. Peregrine's wellness culture is part of what makes the company unique and is an important selling factor in recruiting top talent." The "Integrated Wellness" program includes a variety of year-round activities focused on three health and wellness core areas—fitness, nutrition and spirit. From nutritional seminars and weekly on-site massage therapy to "Active Monday" workouts, CSA pick-up, ping-pong tournaments and October pumpkin carving contests, there are a range of activities targeted at promoting health and wellness. Peregrine also sponsors local fitness races and sports teams throughout the year by covering the entry fees for employees and their families. Finally, every employee is allocated two paid days a year to use toward health and wellness, including volunteer work with a non-profit. ABOUT PEREGRINE SEMICONDUCTOR Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology—a patented, advanced form of SOI—to deliver the performance edge needed to solve the RF market's biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since, Peregrine holds more than 180 filed and pending patents and has shipped over 2 billion UltraCMOS units. For more information, visit . The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the, and other countries. All other trademarks mentioned herein are the property of their respective owners. Editorial Contact:</p>]]></content:encoded> <category><![CDATA[Semiconductor Companies]]></category> <link>http://semiconductordevice.net/SemiconductorCompanies/san-diego-semiconductor-company</link> <guid isPermaLink="true">http://semiconductordevice.net/SemiconductorCompanies/san-diego-semiconductor-company</guid> <pubDate>Wed, 27 Jan 2021 14:15:00 +0000</pubDate> </item> <item> <title>Silicon Semiconductor diode</title> <description>Semiconductor diode theory is at the very centre of much of today's electronics industry. In fact semiconductor technology is present in almost every area of modern day technology and as such semiconductor theory is a very ...</description> <content:encoded><![CDATA[<img src="/img/high_quality_silicon_semiconductor_diode_promotion.jpg" alt="Brazil Ask price Sell like hot" align="left" /><p>Semiconductor diode theory is at the very centre of much of today's electronics industry. In fact semiconductor technology is present in almost every area of modern day technology and as such semiconductor theory is a very important element of electronics. One of the fundamental structures within semiconductor technology is the PN junction. It is the fundamental building block of semiconductor diodes and transistors and a number of other electronic components. The semiconductor diode has the valuable property that electrons only flow in one direction across it and as a result it acts as a rectifier. As it has two electrodes it receives its name - diode. In view of this, it is one of the most fundamental structures in semiconductor technology. Vast numbers of diodes are manufactured each year, and of course the semiconductor diode is the basis of many other devices apart from diodes. The bipolar junction transistor, junction FET and many more all rely on the PN junction for their operation. This makes the semiconductor PN junction diode one of the key enablers in today's electronics technology. PN Junction In its basic form a semiconductor diode is formed from a piece of silicon by making one end P type and the other end N type. This means that both ends have different characteristics. One end has an excess of electrons whilst the other has an excess of holes. Where the two areas meet the electrons fill the holes and there are no free holes or electrons. This means that there are no available charge carries in this region. In view of the fact that this area is depleted of charge carriers it is known as the depletion region. The semiconductor diode PN junction with no bias applied Even though the depletion region is very thin, often only few thousandths of a millimetre, current cannot flow in the normal way. Different effects are noticed dependent upon the way in which the voltage is applied to the junction. If the voltage is applied such that the P type area becomes positive and the N type becomes negative, holes are attracted towards the negative voltage and are assisted to jump across the depletion layer. Similarly electrons move towards the positive voltage and jump the depletion layer. Even though the holes and electrons are moving in opposite directions, they carry opposite charges and as a result they represent a current flow in the same direction. The semiconductor diode PN junction with forward bias If the voltage is applied to the semiconductor diode in the opposite sense no current flows. The reason for this is that the holes are attracted towards the negative potential that is applied to the P type region. Similarly the electrons are attracted towards the positive potential which is applied to the N type region. In other words the holes and electrons are attracted away from the junction itself and the depletion region increases in width. Accordingly no current flows. The semiconductor diode PN junction with reverse bias PN junction characteristics The PN junction is not an ideal rectifier diode having infinite resistance in the reverse direction and no resistance in the forward direction. The characteristic of a diode PN junction</p>]]></content:encoded> <category><![CDATA[Semiconductor Diode]]></category> <link>http://semiconductordevice.net/SemiconductorDiode/silicon-semiconductor-diode</link> <guid isPermaLink="true">http://semiconductordevice.net/SemiconductorDiode/silicon-semiconductor-diode</guid> <pubDate>Tue, 19 Jan 2021 14:14:00 +0000</pubDate> </item> <item> <title>Semiconductor diodes Notes</title> <description>Nonideal p–n diode current-voltage characteristics. The ideal diode has zero resistance for the forward bias polarity, and infinite resistance (conducts zero current) for the reverse voltage polarity; if connected in an ...</description> <content:encoded><![CDATA[<img src="/img/sensors_free_full_text_hydrogen_sensors.jpg" alt="Hydrogen Sensors Using" align="left" /><p>Nonideal p–n diode current-voltage characteristics. The ideal diode has zero resistance for the forward bias polarity, and infinite resistance (conducts zero current) for the reverse voltage polarity; if connected in an alternating current circuit, the semiconductor diode acts as an . The semiconductor diode is not ideal. As shown in the figure, the diode does not conduct appreciably until a nonzero knee voltage (also called the turn-on voltage or the cut-in voltage) is reached. Above this voltage the slope of the current-voltage curve is not infinite (on-resistance is not zero). In the reverse direction the diode conducts a nonzero leakage current (exaggerated by a smaller scale in the figure) and at a sufficiently large reverse voltage below the breakdown voltage the current increases very rapidly with more negative reverse voltages. As shown in the figure, the on and off resistances are the reciprocal slopes of the current-voltage characteristic at a selected bias point: where rD is the resistance and ΔiD is the current change corresponding to the diode voltage change ΔvD at the bias vD=VBIAS. Operation [edit] Here, the operation of the abrupt p–n diode is considered. By "abrupt" is meant that the p- and n-type doping exhibit a step function discontinuity at the plane where they encounter each other. The objective is to explain the various bias regimes in the figure displaying current-voltage characteristics. Operation is described using band-bending diagrams that show how the lowest conduction band energy and the highest valence band energy vary with position inside the diode under various bias conditions. For additional discussion, see the articles Semiconductor and Band diagram. Zero bias [edit] The figure shows a band bending diagram for a p–n diode; that is, the band edges for the conduction band (upper line) and the valence band (lower line) are shown as a function of position on both sides of the junction between the -type material (left side) and the -type material (right side). When a -type and an -type region of the same semiconductor are brought together and the two diode contacts are short-circuited, the Fermi half-occupancy level (dashed horizontal straight line) is situated at a constant level. This level ensures that in the field-free bulk on both sides of the junction the hole and electron occupancies are correct. (So, for example, it is not necessary for an electron to leave the -side and travel to the -side through the short circuit to adjust the occupancies.)</p>]]></content:encoded> <category><![CDATA[Semiconductor Diode]]></category> <link>http://semiconductordevice.net/SemiconductorDiode/semiconductor-diodes-notes</link> <guid isPermaLink="true">http://semiconductordevice.net/SemiconductorDiode/semiconductor-diodes-notes</guid> <pubDate>Mon, 11 Jan 2021 14:12:00 +0000</pubDate> </item> </channel></rss>If you would like to create a banner that links to this page (i.e. this validation result), do the following:
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